Backside Illuminated CIS
To maximize SNR and QE (Quantum Efficiency) our products use Back Illuminated pixels to maximize light collection in pixels and maximize angular sensitivity. BSI allows us to make a small sized 5 um ToF pixel maintaining still acceptable SNR levels under each condition. BSI combined with DTI (Deep Trench Isolation) maintain excellent sharpness in each pixel even with thicker sensitive pixel layer to optimize QE at NIR wavelengths.
In order to have state-of-the-art modulation frequencies up to 165 MHz Opix has chosen a CIS technology which offers wafer stacking in combination with BSI allowing extremely fast signal transfer speeds in our products. A separation between pixel layer and circuit layer enables us also to add dedicated features in our products such as multiple acquisition modes (depth with single and dual frequency, auto focus mode with on-chip depth calculator and IR imaging), low-power stand by modes and an industry standard MIPI CSI-2 interface allow very versatile and flexible operation providing cost effective all-in solutions making this product the ultimate choice for several 3D imaging applications
Global shutter sensors expose all pixels on the sensor at the same time. For ToF detectors this is crucial to gate the pixel array and synchronize with the light source. Opix offers solutions with 3-tap charge domain global shutter storage, addressing depth imaging requirements for high accuracy and high ambient light suppression.